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hanbit h m f 4 m32m 8v url:www.hbe.co.kr 1 hanbit electronics co., ltd rev.02(august,2002). pin assignment general description the h m f 4 m32m 8v is a high - speed flash read only memory (from) module containing 8 , 388 , 608 words organized in a x32bit configuration. the module consists of eight 2m x 8bit from mounted on a 72 - pin, double - sided, fr4 - printed ci rcuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch add resses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. four chip enable inputs, , (/ce_1l , /ce_1h, /ce_2l, /ce_2h ) are used to enable the module s 16 bit s inde pendently. output enable (/oe) and write enable (/we) can set the memory input and output. when from module is disable condition the module is becoming power standby mode, system designer can get low - power design. all module components may be powered from a single + 3.3 v dc power supply and all inputs and outputs are ttl - compatible. features pin symbol pin symbol pin symbol 1 vss 25 dq17 49 /we 2 /reset 26 dq18 50 a18 3 dq0 27 dq19 51 a17 4 dq1 28 dq20 52 a16 5 dq2 29 dq21 53 a15 6 dq3 30 vcc 54 a14 7 dq4 31 dq22 55 a13 8 dq5 32 dq23 56 a12 9 dq6 33 /ce_1h 57 a11 10 vcc 34 /ce_2h 58 a10 11 dq7 35 dq24 59 vcc 12 /ce_1l 36 dq25 60 a9 13 /ce_2l 37 dq26 61 a8 14 dq8 38 dq27 62 a7 15 dq9 39 vss 63 a6 16 dq10 40 dq28 64 a5 17 dq11 41 dq29 65 a4 18 dq12 4 2 dq30 66 a3 19 dq13 43 dq31 67 a2 20 dq14 44 nc 68 a1 21 dq15 45 nc 69 a0 22 nc 46 vcc 70 a20 23 nc 47 a19 71 nc(a21) 24 dq16 48 /oe 72 vss f lash - rom m odule 16 mbyte ( 4 m x 32bit) , 72pin - simm, 3.3v design part no. hmf 4 m32m8 v w access time : 70 , 80, 90 , 120ns w high - density 16mbyte design w high - reliability, lo w - power design w single + 3.3 v 0. 3 v power supply w easy memory expansion w all inputs and outputs are ttl - compatible w fr4 - pcb design w low profile 72 - pin simm w minimum 1 ,0 00,000 write/erase cycle w sectors erase architecture w sector group protection w temporary sector group unprotection option s marking w timing 70ns access - 70 80ns access - 80 90ns access - 90 120 n s access - 120 w packages 72 - pin simm m
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 2 hanbit electronics co., ltd rev.02(august,2002). functional block dia gram dq0 - dq31 a 1 C a2 0 32 a0 - 19 / c e /oe dq 0 - 7 / w e u1 ry - by /reset a0 - 19 / c e /oe dq 8 - 15 /we u 2 ry - by /reset a0 - 19 / c e /oe dq 16 - 23 / we u 3 ry - by /reset a0 - 19 / c e /oe dq 24 - 31 / w e u 4 ry - by /reset / ce_1l / ce_ 1l / ce _1h / ce_1h / oe /we /reset 21 a0 - 19 / c e /oe / w e u 5 ry - by /reset a0 - 19 / c e /oe dq 8 - 15 /we u 6 ry - by /reset a0 - 19 / c e /oe dq 16 - 23 /we u 7 ry - by /reset a0 - 19 / c e /oe dq 24 - 31 /we u 8 r y - by /reset dq15/a - 1 a0 dq15/a - 1 dq 0 - 7 dq15/a - 1 dq15/a - 1 dq15/a - 1 dq15/a - 1 dq15/a - 1 dq15/a - 1 / ce_ 2 l / ce_ 2 l / ce_ 2h / ce_ 2h
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 3 hanbit electronics co., ltd rev.02(august,2002). truth table mode /oe /ce /we /reset dq ( /byte=l ) power stan dby x h x vcc 0.3v high - z standby not selected h l h h high - z active read l l h h d out active write or erase x l l h d in active note : x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0. 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0.5 v to + 4 .0v power dissipation pd 8w storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 55 o c to +125 o c w stresses greater than those listed under " a bsolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not imp lied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc opera ting conditions parameter symbol min typ . max vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and oper ating characteristic s ( 0 o c t a 70 o c ) parameter test conditions symbo l min max unit input load current vcc=vcc max, v in = vss to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = vss to vcc i l0 1.0 m a output high voltage i oh = - 2. 0 ma, v cc = vcc min v oh 0.85x vcc v output low voltage i ol = 4.0 ma, vcc =vcc min v ol 0.45 v 5mhz 72(tpy) 128 vcc active read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 16(tpy) 32 ma vcc active write curren t (2) /ce = v il , /oe=v ih i cc2 160(tpy) 240 m a vcc standby current /ce, /reset=vcc 0.3v i cc3 1.6(tpy) 40.0 m a low vcc lock - out voltage v lko 2.3 2.5 v notes : 1. the i cc current listed is typically less than 2ma/mhz, with /oe at v ih .
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 4 hanbit electronics co., ltd rev.02(august,2002). 2 . i cc active while embedded algorithm (progr am or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec chip erase time 25 sec excludes 00 h programming prior to erasure byte programming time - 9 3 00 m s chip programming time - 12 36 sec excludes system - level overhead tsop capacitance parameter symbol parameter descrip tion test set up typ. max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8 .5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteri stics parameter symbols s peed options jedec standard description test setup - 70 r - 80 - 90 - 120 unit t avav t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce = v il /oe = v il max 70 80 90 120 ns t elqv t ce chip enable to output delay /oe = v il max 70 80 90 120 ns t glqv t oe output enable to output delay max 30 30 35 50 ns t ehqz t df chip enable to output high - z max 25 25 30 30 ns t ghqz t df output enable to output high - z max 25 25 30 30 ns t axqx t qh output hold time from addresses, /ce or /oe, whichever occurs first min 0 ns test specifications test condition 70r, 80 90, 120 unit output load 1ttl gate output load capacitance,c l (including jig capacitance) 30 100 pf input rise and f a ll times 5 ns input pulse levels 0.0 - 3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 5 hanbit electronics co., ltd rev.02(august,2002). u erase/program operations parameter symbols s peed options jedec standard description 70r 80 90 120 unit t avav t wc write cycle time min 70 80 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output ena ble setup time min 0 ns t ghwl t ghwl read recover y time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t wh wh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec t v cs vcc set up time min 50 m s notes : 1 . this does not include the preprogramming time 2 . this timing is only for sector protect ope rations 3 .0v device under test 2.7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 6 hanbit electronics co., ltd rev.02(august,2002). u erase/program operations alternate /ce controlled writes parameter symbols s peed options jedec standard description - 70r - 80 - 90 120 unit t avav t wc write cycle time min 70 80 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 4 5 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover y time before write min 0 ns t elwl t cs /ce setup ti me min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 m s t whwh2 t whwh2 sector erase operation (note1) typ 0.7 sec no tes : 1. this does not include the preprogramming time 2 . this timing is only for sector protect operations
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 7 hanbit electronics co., ltd rev.02(august,2002). u read operations timing u reset timing
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 8 hanbit electronics co., ltd rev.02(august,2002). u program operations timing u chip/sector erase operation timings
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 9 hanbit electronics co., ltd rev.02(august,2002). u data# polling times(during embedded algorithms) u toggle# bit timings (during embedded algorithms)
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 10 hanbit electronics co., ltd rev.02(august,2002). u sector protect unprotect timeing diagram u alternate ce# controlled write operating timings
hanbit h m f 4 m32m 8v url:www.hbe.co.kr 11 hanbit electronics co., ltd rev.02(august,2002). package dimensions (unit : mm) o r dering information part number density o rg. package component number vcc speed hmf4m32m8v - 70 16mbyte 4mx 32bit 72pin - simm 8ea 3.3v 70ns hmf4m32m8v - 80 16mbyte 4mx 32bit 72pin - simm 8ea 3.3v 80ns hmf4m32m8v - 90 16mbyte 4mx 32bit 72pin - simm 8ea 3.3v 90ns hmf4m32m8v - 120 16mbyte 4mx 32bit 72pin - simm 8ea 3.3v 120ns 0.25 mm max min 2.54 mm 1.27 (solder & gold plating) gold: 1.04 0. 10 mm solder: 0.914 0. 10 mm 1.2 7 0.08 mm

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